Reading at 133 Mbps, 30 nm class, 32 Gb, multi-level-cell (MLC) NAND memory has asynchronous DDR (double data rate) interface and is intended to raise read performance of mobile devices requiring high-speeds and large amounts of storage space. It also enables double data rate transmission to be achieved without increasing power consumption. Use of 30 nm-class DDR NAND also enables premium memory cards to register 60 Mbps read speeds.

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