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| | Compact, 40 nm eDRAM promote power savings in electronics.

Compact, 40 nm eDRAM promote power savings in electronics.


Featuring clock speeds up to 800 MHz, UX8GD eDRAM (embedded dynamic random access memory) offers power levels suited for use in consumer electronics. Also available, UX8LD eDRAM exhibits leakage-current levels that help minimize power consumption in mobile handsets and other portable devices. Both solutions combine 40 nm CMOS process technology with eDRAM process technology, are available in memory configurations up to 256 Mb, and feature cell size of 0.06 µm².

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